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[1]宋慧敏,田苗,吴俊锋,等.均压驱动耦合型单驱动IGBT 串联电路设计[J].高压电器,2019,55(05):144-153.[doi:DOI:10.13296/j.1001-1609.hva.2019.05.023]
 SONG Huimin,TIAN Miao,WU Junfeng,et al.Design of Voltage?sharing Driving Coupled Single Driving IGBT Series Circuit[J].High Voltage Apparatus,2019,55(05):144-153.[doi:DOI:10.13296/j.1001-1609.hva.2019.05.023]
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均压驱动耦合型单驱动IGBT 串联电路设计()
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《高压电器》[ISSN:1001-1609/CN:61-11271/TM]

卷:
第55卷
期数:
2019年05期
页码:
144-153
栏目:
研究与分析
出版日期:
2019-05-20

文章信息/Info

Title:
Design of Voltage?sharing Driving Coupled Single Driving IGBT Series Circuit
作者:
宋慧敏1 田苗1 吴俊锋1 张志波1 金迪1 杨永红2
(1. 空军工程大学等离子体动力学重点实验室,西安710038;2. 95156部队,南宁530048)
Author(s):
SONG Huimin1TIAN Miao1WU Junfeng1ZHANG Zhibo1JIA Min1JIN Di1YANG Yonghong2
(1. Science and Technology on Plasma Dynamics Laboratory,Air Force Engineering University,Xi’an 710038,China; 2. 295156 Sub Unit,Nanning 530048,China)
关键词:
高压脉冲IGBT串联单驱动介质阻挡放电
Keywords:
high voltage pulseseries IGBTsingle drivingDBD
DOI:
DOI:10.13296/j.1001-1609.hva.2019.05.023
摘要:
为给介质阻挡放电提供电压、频率、脉宽可调的高压脉冲,文中设计了均压驱动耦合型单驱动IGBT串 联电路。该串联电路在每个IGBT两端并联一个动态均压与驱动信号输出耦合电路,在导通关断时,一方面 保证IGBT两端电压不超过额定电压,另一方面为?#24405;禝GBT提供驱动截止信号。通过仿真研究,验证了电路 原理?#30446;?#34892;性,探索了元器件的选型规则。通过实验研究,?#36842;?#20102;电源电压在0~15 kV可通断、频率在0~ 1 kHz可调节、脉冲宽度在一定范围内可变化,并成功?#36842;?#20171;质阻挡放电。该电路解决了多驱动IGBT串联电 路需要隔离高压电源及单驱动IGBT串联电路结构难以扩展,各级IGBT导通关断跟随性差,元器件容易损坏 的缺陷。该电路同样适用于MOSFET,具有很好的应用前景。
Abstract:
A single driving voltage sharing and driving coupled series IGBT is designed in order to provide pulse power with adjustable voltage,frequency and pulse width for dielectric barrier discharge. In this series circuit,a cou? pling circuit of a dynamic averaging voltage and a driving signal output is connected in parallel with each IGBT. When the circuit turns on or off,the voltage between each IGBT will be restricted under rated value,and supply a driving or cut?off signal for the next IGBT. The feasibility of the circuit principle is verified,and the criteria of the cir? cuit components are explored by simulated. In experiment,the voltage can be adjusted between 0 and 15 kV,the fre? quency can vary from 0 to 1 kHz,the pulse width can be regulated within certain range with 8 series IGBT circuits. Dielectric barrier discharge is achieved by this series circuit. The traditional multi driving series IGBT must be isolat? ed from high voltage power supply,and single driving series IGBT works with a fixed voltage and pulse width. The se? ries circuit in this paper solves both problems and is also applicable for MOSFET,which owns great potential and worthwhile further study.

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备注/Memo

备注/Memo:
收稿日期:2018?11?20; 修回日期:2019?01?11 基金项目:国?#26131;?#28982;科学基金项目(11472306,51407197,51507187)。 Project Supported by National Natural Science Foundation of China(11472306,51407197,51507187).宋慧敏(1979—),女,博士,副教授,主要研究方向为等离 子体流动控制(通信作者)。 田苗(1995—),女,硕士研究生,主要研究方向为等离 子体流动控制。
更新日期/Last Update: 2019-05-20
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